CdTe X/?-ray Detectors with Different Contact Materials
نویسندگان
چکیده
Different contact materials and optimization of techniques their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/?-ray detectors. The heterostructures with ohmic (MoOx) Schottky (MoOx, TiOx, TiN, In) contacts, created by DC reactive magnetron sputtering vacuum thermal evaporation, as well In/CdTe/Au diodes a p-n junction, formed laser-induced doping, have been developed investigated. Depending on surface pre-treatment semi-insulating p-CdTe crystals, deposition MoOx film either or contacts. Based calculations I-V characteristics Mo-MoOx/p-CdTe/MoOx-Mo, In/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, Ti-TiN/p-CdTe/MoOx-Mo Schottky-diode detectors, current transport processes were described in models carrier generation–recombination within space-charge region (SCR) at low bias, limited incorporating Poole–Frenkel effect higher voltages, respectively. energies centers, density trapping effective lifetimes determined. Nanosecond laser irradiation In electrode, pre-deposited resulted extending voltage range, corresponding SCR diodes. Such junction diode detectors demonstrated energy resolutions (7%@59.5 keV, 4%@122 1.6%@662 keV).
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ژورنال
عنوان ژورنال: Sensors
سال: 2021
ISSN: ['1424-8220']
DOI: https://doi.org/10.3390/s21103518